MBE growth of pseudomorphic InGaAs/GaPAsSb quantum wells on GaAs

被引：0
|
作者：
Braun, W
Dowd, P
Smith, DJ
Ryu, CM
Koelle, U
Johnson, SR
Guo, CZ
Zhang, YH
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[3] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
[4] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
[5] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
COMPOUND SEMICONDUCTORS 1999 | 2000年 / 166期
关键词：
D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present a novel layered semiconductor structure consisting of alternating InGaAs and GaPAsSb layers grown pseudomorphically on a GaAs substrate by all-solid-source molecular beam epitaxy. The wavelength is determined by the thickness and composition of both types of layers and can be varied from 1100 to 1550 nm. Detailed photoluminescence measurements show that the observed strong room-temperature emission is due to a type-II transition between the alternating layers.
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页码：59 / 62
页数：4
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