MBE growth of pseudomorphic InGaAs/GaPAsSb quantum wells on GaAs

被引：0
|
作者：
Braun, W
Dowd, P
Smith, DJ
Ryu, CM
Koelle, U
Johnson, SR
Guo, CZ
Zhang, YH
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[3] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
[4] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
[5] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
COMPOUND SEMICONDUCTORS 1999 | 2000年 / 166期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present a novel layered semiconductor structure consisting of alternating InGaAs and GaPAsSb layers grown pseudomorphically on a GaAs substrate by all-solid-source molecular beam epitaxy. The wavelength is determined by the thickness and composition of both types of layers and can be varied from 1100 to 1550 nm. Detailed photoluminescence measurements show that the observed strong room-temperature emission is due to a type-II transition between the alternating layers.
引用
收藏
页码：59 / 62
页数：4
相关论文
共 50 条
  • [31] Interdiffusion in InGaAs/GaAs and InGaAs/GaAsP quantum wells
    Oster, A
    Bugge, F
    Gramlich, S
    Procop, M
    Zeimer, U
    Weyers, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 20 - 23
  • [32] InGaP/InGaAs/GaAs pseudomorphic HEMT grown by solid source MBE.
    Aziz, AA
    Missous, M
    1996 HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS WORKSHOP - EDMO, 1996, : 145 - 152
  • [33] CHARACTERIZATION OF HIGH-QUALITY PSEUDOMORPHIC INGAAS/GAAS QUANTUM-WELLS BY LUMINESCENCE AND REFLECTANCE TECHNIQUES
    PAMULAPATI, J
    BHATTACHARYA, P
    TOBER, RL
    LOEHR, JP
    SINGH, J
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) : 4487 - 4491
  • [34] Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD
    Marmalyuk, AA
    Govorkov, OI
    Petrovsky, AV
    Nikitin, DB
    Padalitsa, AA
    Bulaev, PV
    Budkin, IV
    Zalevsky, ID
    NANOTECHNOLOGY, 2001, 12 (04) : 434 - 436
  • [35] PHOTOLUMINESCENCE AND ELECTROREFLECTANCE STUDIES OF MODULATION-DOPED PSEUDOMORPHIC ALGAAS/INGAAS/GAAS QUANTUM-WELLS
    DODABALAPUR, A
    KESAN, VP
    NEIKIRK, DP
    STREETMAN, BG
    HERMAN, MH
    WARD, ID
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (03) : 265 - 270
  • [36] Identification of room temperature photoluminescence in pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wells
    Lu, W
    Ng, GI
    Jogai, B
    Lee, JH
    Park, CS
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 1345 - 1349
  • [37] Optical Gain Characteristics of Long-wavelength Type-II InGaAs/GaPAsSb Quantum Wells Grown on GaAs Substrates
    Park, Seoung-Hwan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 58 (03) : 434 - 438
  • [38] Interfacial property of the pseudomorphic InGaAs/AlGaAs multiple quantum wells
    Zhang, DH
    SURFACE REVIEW AND LETTERS, 2001, 8 (05) : 537 - 540
  • [39] GROWTH AND CHARACTERIZATION OF ALGAAS/INGAAS/GAAS PSEUDOMORPHIC STRUCTURES
    FISCHERCOLBRIE, A
    MILLER, JN
    LADERMAN, SS
    ROSNER, SJ
    HULL, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 620 - 624
  • [40] The MBE growth research on InGaAs/GaAs heterofilms
    Luo, Zi-Jiang
    Zhou, Xun
    Yang, Zai-Rong
    He, Ye-Quan
    He, Hao
    Deng, Chao-Yong
    Ding, Zhao
    Gongneng Cailiao/Journal of Functional Materials, 2011, 42 (05): : 846 - 849
12345