Measurement of Spontaneous Emission Quantum Efficiency in InGaAs/GaAs Quantum Wells

被引：0
|
作者：
Ding, Ding [1 ]
Johnson, Shane R. [1 ]
Wang, Jiang-Bo [1 ]
Yu, Shui-Qing [1 ]
Zhang, Yong-Hang [1 ]
机构：
[1] Arizona State Univ, Ctr Nanophoton, Dept Elect Engn, Tempe, AZ 85281 USA
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The spontaneous emission quantum efficiency of molecular beam epitaxy grown InGaAs/GaAs quantum wells is determined using photoluminescence measurements. The quantum efficiency is inferred from the power law that links pump power and integrated photoluminescence signal. (C) 2008 Optical Society of America
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页码：1057 / +
页数：2
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