Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature

被引：0
|
作者：
Wang, R.L. [1 ]
Su, Yan-Kuin [1 ]
Wang, Y.H. [1 ]
Yarn, K.F. [1 ]
机构：
[1] Dept of Electr Eng, Nat Cheng Kung, Univ, Tainan, Taiwan
来源：
Electron device letters | 1990年 / 11卷 / 10期
关键词：
Semiconductor Diodes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：428 / 430
相关论文
共 50 条
  • [41] Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared
    Luna, E
    Hopkinson, M
    Ulloa, JM
    Guzmán, A
    Muñoz, E
    APPLIED PHYSICS LETTERS, 2003, 83 (15) : 3111 - 3113
  • [42] Coupling effects observed in the intersubband photocurrent of photovoltaic double-barrier quantum-well infrared detectors
    Ehret, S
    Schneider, H
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (12) : 9369 - 9374
  • [43] THEORY OF MAGNETOTUNNELING THROUGH DONORS IN THE QUANTUM-WELL OF DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES
    FROMHOLD, TM
    SHEARD, FW
    EAVES, L
    ACTA PHYSICA POLONICA A, 1992, 82 (05) : 737 - 740
  • [44] VERTICAL TRANSPORT IN SCHOTTKY-GATED, LATERALLY CONFINED DOUBLE-BARRIER QUANTUM-WELL HETEROSTRUCTURES
    GUERET, P
    BLANC, N
    GERMANN, R
    ROTHUIZEN, H
    SURFACE SCIENCE, 1992, 263 (1-3) : 212 - 216
  • [45] IMPROVEMENT OF THE CARRIER CONFINEMENT BY DOUBLE-BARRIER GAAS/ALAS/(AL,GA)AS QUANTUM-WELL STRUCTURES
    NEU, G
    CHEN, Y
    DEPARIS, C
    MASSIES, J
    APPLIED PHYSICS LETTERS, 1991, 58 (19) : 2111 - 2113
  • [46] GREENS-FUNCTION APPROACH TO THE ELECTRONIC-STRUCTURE OF DOUBLE-BARRIER QUANTUM-WELL HETEROSTRUCTURES
    KIM, GG
    CHOI, YW
    PARK, PW
    CHU, HY
    LEE, EH
    ARNOLD, GB
    PHYSICAL REVIEW B, 1994, 50 (11): : 7582 - 7586
  • [47] Effects on the resonant tunneling characteristics of a double-barrier diode of intentional and unintentional dopings in the quantum well
    Sakai, JW
    Beton, PH
    Eaves, L
    Main, PC
    Henini, M
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1452 - 1455
  • [48] Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes
    Bayram, C.
    Vashaei, Z.
    Razeghi, M.
    APPLIED PHYSICS LETTERS, 2010, 97 (18)
  • [49] Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect
    Luna, E.
    Trampert, A.
    Guzmán, A.
    Calleja, E.
    Journal of Applied Physics, 2005, 98 (04):
  • [50] REPETITION OF NEGATIVE DIFFERENTIAL RESISTANCE IN VERTICALLY INTEGRATED DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
    WU, JS
    LEE, CP
    CHANG, CY
    CHANG, KH
    LIU, DG
    LIOU, DC
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) : 4382 - 4385
12345