Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature

被引：0
|
作者：
Wang, R.L. [1 ]
Su, Yan-Kuin [1 ]
Wang, Y.H. [1 ]
Yarn, K.F. [1 ]
机构：
[1] Dept of Electr Eng, Nat Cheng Kung, Univ, Tainan, Taiwan
来源：
Electron device letters | 1990年 / 11卷 / 10期
关键词：
Semiconductor Diodes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：428 / 430
相关论文
共 50 条
  • [11] INTERSUBBAND PHOTOCURRENT FROM THE QUANTUM-WELL OF AN ASYMMETRICAL DOUBLE-BARRIER STRUCTURE
    LIU, HC
    AERS, GC
    BUCHANAN, M
    WASILEWSKI, ZR
    LANDHEER, D
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) : 935 - 940
  • [12] TUNNELING ASSISTED THERMIONIC EMISSION IN DOUBLE-BARRIER QUANTUM-WELL STRUCTURES
    EHRET, S
    SCHNEIDER, H
    LARKINS, EC
    RALSTON, JD
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) : 2537 - 2543
  • [13] TRANSMISSION COEFFICIENT AND STARK SHIFTS IN DOUBLE-BARRIER QUANTUM-WELL STRUCTURES
    BERZ, F
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (02) : 243 - 253
  • [14] A NOVEL GAAS DELTA-DOPING INDUCED TRIANGLE-LIKE DOUBLE-BARRIER TUNNELING DIODE
    WANG, RL
    SU, YK
    WANG, YH
    SOLID-STATE ELECTRONICS, 1991, 34 (02) : 223 - 224
  • [15] SIMULATION OF QUANTUM TRANSPORT IN MEMORY-SWITCHING DOUBLE-BARRIER QUANTUM-WELL DIODES
    GULLAPALLI, KK
    MILLER, DR
    NEIKIRK, DP
    PHYSICAL REVIEW B, 1994, 49 (04): : 2622 - 2628
  • [16] TEMPERATURE INDEPENDENT QUANTUM-WELL FET WITH DELTA CHANNEL DOPING
    YOUNG, PG
    MENA, RA
    ALTEROVITZ, SA
    SCHACHAM, SE
    HAUGLAND, EJ
    ELECTRONICS LETTERS, 1992, 28 (14) : 1352 - 1354
  • [17] Ge quantum dot tunneling diode with room temperature negative differential resistance
    Oehme, M.
    Karmous, A.
    Sarlija, M.
    Werner, J.
    Kasper, E.
    Schulze, J.
    APPLIED PHYSICS LETTERS, 2010, 97 (01)
  • [18] OBSERVATION OF A NEGATIVE DIFFERENTIAL RESISTANCE DUE TO TUNNELING THROUGH A SINGLE BARRIER INTO A QUANTUM-WELL
    MORKOC, H
    CHEN, J
    REDDY, UK
    HENDERSON, T
    LURYI, S
    APPLIED PHYSICS LETTERS, 1986, 49 (02) : 70 - 72
  • [19] TUNNELING ESCAPE RATE OF ELECTRONS FROM QUANTUM-WELL IN DOUBLE-BARRIER HETEROSTRUCTURES
    TSUCHIYA, M
    MATSUSUE, T
    SAKAKI, H
    PHYSICAL REVIEW LETTERS, 1987, 59 (20) : 2356 - 2359
  • [20] THEORETICAL-STUDY OF TUNNELING PHENOMENA IN DOUBLE-BARRIER QUANTUM-WELL HETEROSTRUCTURES
    KIM, G
    ARNOLD, GB
    PHYSICAL REVIEW B, 1988, 38 (05): : 3252 - 3262
12345