Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature

被引：0
|
作者：
Wang, R.L. [1 ]
Su, Yan-Kuin [1 ]
Wang, Y.H. [1 ]
Yarn, K.F. [1 ]
机构：
[1] Dept of Electr Eng, Nat Cheng Kung, Univ, Tainan, Taiwan
来源：
Electron device letters | 1990年 / 11卷 / 10期
关键词：
Semiconductor Diodes;
D O I：
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学科分类号：
摘要：
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页码：428 / 430
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