Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

被引：66
|
作者：
Bayram, C. [1 ]
Vashaei, Z. [1 ]
Razeghi, M. [1 ]
机构：
[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 18期
关键词：
GAN; ALN;
D O I：
10.1063/1.3515418
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AlGaN/GaN resonant tunneling diodes (RTDs), consisting of 20% (10%) aluminum-content in double-barrier (DB) active layer, were grown by metal-organic chemical vapor deposition on freestanding polar (c-plane) and nonpolar (m-plane) GaN substrates. RTDs were fabricated into 35-mu m-diameter devices for electrical characterization. Lower aluminum content in the DB active layer and minimization of dislocations and polarization fields increased the reliability and reproducibility of room-temperature negative differential resistance (NDR). Polar RTDs showed decaying NDR behavior, whereas nonpolar ones did not significantly. Averaging over 50 measurements, nonpolar RTDs demonstrated a NDR of 67 Omega, a current-peak-to-valley ratio of 1.08, and an average oscillator output power of 0.52 mW. (C) 2010 American Institute of Physics. [doi:10.1063/1.3515418]
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页数：3
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