Effect of Fowler-Nordheim stress on charge trapping properties of ultrathin N2O-oxynitrided SiO2 films

被引：0
|
作者：
Fukuda, Hisashi [1 ]
Nomura, Shigeru [1 ]
机构：
[1] Muroran Inst of Technology, Hokkaido, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：87 / 88
相关论文
共 50 条
  • [31] NOVEL CHARGE INTEGRATING PULSED I(V) TECHNIQUE - A MEASUREMENT OF FOWLER-NORDHEIM CURRENTS THROUGH THIN SIO2-FILMS
    POLER, JC
    WOODWARD, WS
    IRENE, EA
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (03): : 781 - 787
  • [32] Effect of TaSi2 and WSi2 deposition on interfacial defects and Fowler-Nordheim injection in polycide gate SiO2 MOS capacitors
    Croci, S
    Plossu, C
    Balland, B
    Autran, JL
    Boivin, P
    JOURNAL DE PHYSIQUE IV, 2001, 11 (PR11): : 199 - 203
  • [33] OBSERVATION OF POSITIVELY CHARGED STATE GENERATION NEAR THE SI/SIO2 INTERFACE DURING FOWLER-NORDHEIM TUNNELING
    MASERJIAN, J
    ZAMANI, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 743 - 746
  • [34] Fowler-Nordheim current oscillations in Si(111)/SiO2/twisted-Si(111) tunneling structures
    Moraru, D
    Kato, H
    Horiguchi, S
    Ishikawa, Y
    Ikeda, H
    Tabe, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11): : L316 - L318
  • [35] Fowler-Nordheim current oscillations in Si(111)/SiO2/twisted- Si(111) tunneling structures
    Moraru, Daniel
    Kato, Hiroshi
    Horiguchi, Seiji
    Ishikawa, Yasuhiko
    Ikeda, Hiroya
    Tabe, Michiharu
    Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (8-11):
  • [36] Investigation of interface traps at Si/SiO2 interface of SOI pMOSFETs induced by Fowler-Nordheim tunneling stress using the DCIV method
    Li, Xiaojing
    Zeng, Chuanbin
    Wang, Ruiheng
    Gao, Linchun
    Yan, Weiwei
    Luo, Jiajun
    Han, Zhengsheng
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 124 (09):
  • [37] (100)Si/SiO2 interface states above midgap induced by Fowler-Nordheim tunneling electron injection
    Inoue, M
    Shirafuji, J
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (11) : 6315 - 6321
  • [38] 2-bit operation based on modulated Fowler-Nordheim tunneling in charge-trapping flash memory cell
    Hung, Min-Feng
    Wu, Yung-Chun
    Chen, Jiang-Hung
    APPLIED PHYSICS LETTERS, 2012, 100 (05)
  • [39] Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors
    Fiorenza, Patrick
    Frazzetto, Alessia
    Guarnera, Alfio
    Saggio, Mario
    Roccaforte, Fabrizio
    APPLIED PHYSICS LETTERS, 2014, 105 (14)
  • [40] Correlation between Si-SiO2 heterojunction and Fowler-Nordheim conduction mechanism after soft breakdown in ultrathin oxides
    Tan, Changhua
    Xu, Mingzhen
    SOLID STATE COMMUNICATIONS, 2006, 139 (01) : 23 - 26
12345