Effect of Fowler-Nordheim stress on charge trapping properties of ultrathin N2O-oxynitrided SiO2 films

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作者：
Fukuda, Hisashi [1 ]
Nomura, Shigeru [1 ]
机构：
[1] Muroran Inst of Technology, Hokkaido, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 01期
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