Correlation between Si-SiO2 heterojunction and Fowler-Nordheim conduction mechanism after soft breakdown in ultrathin oxides

被引：2
|
作者：
Tan, Changhua [1 ]
Xu, Mingzhen [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2006年 / 139卷 / 01期
关键词：
insulator; semiconductor; electron states;
D O I：
10.1016/j.ssc.2006.05.008
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A stress-induced defect band model is proposed to investigate the Fowler-Nordheim tunneling characteristics of ultrathin gate oxides after soft breakdown. Soft breakdown occurs when the average distance between stress-induced defects locally reaches a critical value to overlap the bound electron wavefunction on adjacent defects and to form a defect band. This model shows that an n(+)-poly-Si/N-SiO2/p-Si heterojunction structure is formed between electrodes at a local area after a soft breakdown in the ultrathin SiO2 and the soft breakdown current can be described in terms of the Fowler-Nordheim tunneling process with a barrier height of similar to 1 eV. (c) 2006 Elsevier Ltd. All rights reserved.
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页码：23 / 26
页数：4
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