DETERMINATION OF THE SI-SIO2 BARRIER HEIGHT FROM THE FOWLER-NORDHEIM PLOT

被引：34
|
作者：
OLIVO, P
SUNE, J
RICCO, B
机构：
[1] DEIS, Università di Bologna
[2] DEIS, Università di Bologna
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期
关键词：
D O I：
10.1109/55.119217
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper it is shown that, even considering a field-dependent Si-SiO2 barrier height for electron tunneling as predicted by the quantum-mechanical (QM) modeling of Si-SiO2 interfaces, the Fowler-Nordheim (F-N) plot is linear. It is proven that the "equivalent" barrier height extracted from the graph slope is not representative of the actual field-dependent barrier. The problem of correctly estimating the oxide field to be used in F-N plots is also addressed.
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收藏
页码：620 / 622
页数：3
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