Fowler-Nordheim current oscillations in Si(111)/SiO2/twisted- Si(111) tunneling structures

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Moraru, Daniel [1 ]
Kato, Hiroshi [1 ]
Horiguchi, Seiji [2 ]
Ishikawa, Yasuhiko [1 ]
Ikeda, Hiroya [1 ]
Tabe, Michiharu [1 ]
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[1] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
[2] Department of Electrical and Electronic Engineering, Akita University, 1-1 Tegata-Gakuen-machi, Akita 010-8502, Japan
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The dependence of Fowler-Nordheim current oscillations (FNCOs) on the twist angle between the facing Si layers in Si(111)/SiO2/Si(111) bonded structures is investigated. The observed systematic variation in oscillation amplitude with twist angle can be ascribed to transverse momentum conservation upon Fowler-Nordheim tunneling through thin SiO2. A calculation result; taking into account the twist-induced decrease in potential discontinuity and consequently in the reflection coefficient at the SiO 2/twisted Si interface; provides the theoretical basis for the experimental results. © 2006 The Japan Society of Applied Physics;
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