Quantitative projections of reliability and performance for low-k/Cu interconnect systems

被引：0

作者：

Banerjee, Kaustav ^{[1
]}

Mehrotra, Amit ^{[1
]}

Hunter, William ^{[1
]}

Saraswat, Krishna C. ^{[1
]}

Goodson, Kenneth E. ^{[1
]}

Wong, S.Simon ^{[1
]}

机构：

[1] Stanford Univ, Stanford, United States

来源：

Annual Proceedings - Reliability Physics (Symposium) | 2000年

关键词：

Copper - Dielectric materials - Electric lines - Electric network analysis - Electric network synthesis - Electromigration - Optimization;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A method for quantitative analysis of three role of electromigration (EM) reliability and interconnect performance in determining the optimal interconnect design in low-k/Cu interconnect systems is presented. EM design limits for signal lines are analyzed. Results show that these limits are satisfied once interconnect performance is optimized.

引用

页码：354 / 358

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