Quantitative projections of reliability and performance for low-k/Cu interconnect systems

被引：0
|
作者：
Banerjee, Kaustav [1 ]
Mehrotra, Amit [1 ]
Hunter, William [1 ]
Saraswat, Krishna C. [1 ]
Goodson, Kenneth E. [1 ]
Wong, S.Simon [1 ]
机构：
[1] Stanford Univ, Stanford, United States
来源：
Annual Proceedings - Reliability Physics (Symposium) | 2000年
关键词：
Copper - Dielectric materials - Electric lines - Electric network analysis - Electric network synthesis - Electromigration - Optimization;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A method for quantitative analysis of three role of electromigration (EM) reliability and interconnect performance in determining the optimal interconnect design in low-k/Cu interconnect systems is presented. EM design limits for signal lines are analyzed. Results show that these limits are satisfied once interconnect performance is optimized.
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页码：354 / 358
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