Physics and application of Si:Er for light emitting diodes

被引:0
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作者
Michel, J. [1 ]
Ren, F.Y.G. [1 ]
Zheng, B. [1 ]
Jacobson, D.C. [1 ]
Poate, J.M. [1 ]
Kimerling, L.C. [1 ]
机构
[1] Dep of Materials Science and, Engineering, Cambridge, United States
关键词
Back transfer process - Inhomogeneous broadening - Photoexcitation;
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页码:707 / 714
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