Influence of exposure to 980 nm laser radiation on the luminescence of Si:Er/O light-emitting diodes

被引：0
|
作者：
Karim, A. [1 ]
Du, C.-X. [1 ]
Hansson, G.V. [1 ]
机构：
[1] Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
来源：
Journal of Applied Physics | 2008年 / 104卷 / 12期
关键词：
Light emitting diodes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] Influence of exposure to 980 nm laser radiation on the luminescence of Si:Er/O light-emitting diodes
    Karim, A.
    Du, C. -X.
    Hansson, G. V.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)
  • [2] Influence of the deformation on the luminescence properties of Si light-emitting diodes
    Sobolev, NA
    Emel'yanov, AM
    Shek, EI
    Feklisova, OV
    Yakimov, EB
    Kotereva, TV
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 6, 2005, 2 (06): : 1842 - 1846
  • [3] Light-emitting Si:Er:O diodes operating in the avalanche regime
    Sobolev, NA
    Emel'Yanov, AM
    Gastev, SV
    Khakuashev, PE
    Nikolaev, YA
    Trishenkov, MA
    MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, 1998, 486 : 139 - 144
  • [4] Radiation effects in light-emitting and laser diodes
    Johnston, AH
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (03) : 689 - 703
  • [5] Efficient light-emitting diodes with radial outcoupling taper at 980 and 630 nm emission wavelength
    Schmid, W
    Scherer, M
    Jäger, R
    Stauss, P
    Streubel, K
    Ebeling, KJ
    LIGHT-EMITTING DIODES: RESEARCH MANUFACTURING, AND APPLICATIONS V, 2001, 4278 : 109 - 118
  • [6] Analytical Impact-Excitation Theory of Er/O/B Codoped Si Light-Emitting Diodes
    Wang, Xiaoming
    He, Jiajing
    Wang, Ao
    Zhang, Kun
    Sheng, Yufei
    Hu, Weida
    Jin, Chaoyuan
    Bao, Hua
    Dan, Yaping
    PHYSICAL REVIEW LETTERS, 2024, 132 (24)
  • [7] 250 nm AlGaN light-emitting diodes
    Adivarahan, V
    Sun, WH
    Chitnis, A
    Shatalov, M
    Wu, S
    Maruska, HP
    Khan, MA
    APPLIED PHYSICS LETTERS, 2004, 85 (12) : 2175 - 2177
  • [8] Influence of Intensive Light Exposure on the Complex Impedance of Polymer Light-Emitting Diodes
    Cury, Fabio Rogerio
    Cazati, Thiago
    Bianchi, Rodrigo Fernando
    MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS, 2008, 11 (02): : 213 - 215
  • [9] Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures
    Sobolev, NA
    Nikolaev, YA
    Emel'yanov, AM
    Vdovin, VI
    SEMICONDUCTORS, 1999, 33 (06) : 613 - 615
  • [10] Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures
    N. A. Sobolev
    Yu. A. Nikolaev
    A. M. Emel’yanov
    V. I. Vdovin
    Semiconductors, 1999, 33 : 613 - 615
12345