Influence of exposure to 980 nm laser radiation on the luminescence of Si:Er/O light-emitting diodes

被引：0
|
作者：
Karim, A. [1 ]
Du, C.-X. [1 ]
Hansson, G.V. [1 ]
机构：
[1] Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
来源：
Journal of Applied Physics | 2008年 / 104卷 / 12期
关键词：
Light emitting diodes;
D O I：
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学科分类号：
摘要：
Journal article (JA)
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