Physics and application of Si:Er for light emitting diodes

被引：0
|
作者：
Michel, J. [1 ]
Ren, F.Y.G. [1 ]
Zheng, B. [1 ]
Jacobson, D.C. [1 ]
Poate, J.M. [1 ]
Kimerling, L.C. [1 ]
机构：
[1] Dep of Materials Science and, Engineering, Cambridge, United States
来源：
Materials Science Forum | 1994年 / 143-4卷 / pt 2期
关键词：
Back transfer process - Inhomogeneous broadening - Photoexcitation;
D O I：
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学科分类号：
摘要：
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页码：707 / 714
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