GaAsP visible light emitting diodes for integration with Si devices

被引：0
|
作者：
Yoshimoto, M [1 ]
Yasui, T
Ha, S
Saraie, J
Matsunami, H
机构：
[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan
[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
来源：
COMPOUND SEMICONDUCTORS 1998 | 1999年 / 162期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
GaAs1-xPx (0.2<x<0.6) was grown with a GaP buffer layer by metalorganic molecular beam epitaxy(MOMBE) for a light emitting device on Si. The growth condition was determined based on in-situ RHEED, ex-situ AFM and X-ray diffraction. The epilayer on Si showed photoluminescence at a wavelength close to its band gap, and showed high resistivity. P-type and n-type doping were achieved with Zn and Sn, respectively. A CaAs0.72P0.28 diode on GaP emitted visible light at 1.83eV at 77K. A CaAs0.88P0.12 diode on Si showed infrared light emission at room temperature.
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页码：55 / 60
页数：6
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