Light emitting diodes on Si

被引：5
|
作者：
Liang, EZ [1 ]
Lin, CF [1 ]
Su, TW [1 ]
Huang, WP [1 ]
Hsieh, HH [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Opt Engn, Taipei 10764, Taiwan
来源：
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VII | 2003年 / 4996卷
关键词：
light emitting diodes; silicon; electroluminescence; silicon dioxide nanoparticle; cadmium sulfide nanoparticle;
D O I：
10.1117/12.476559
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
To extend the usage of silicon as light emitter in optoelectronics, two ways are exploited to overcome its indirect bandgap obstacle. Metal-oxide-semiconductor structures with silicon dioxide (SiO2) nanoparticles as oxide layer exhibits electroluminescence with 1.5x10(-4) external efficiency at Si bandgap energy. The enhancement in light emission is attributed to carrier concentration due to non-uniformity of oxide thickness. Another approach is to take advantage of direct bandgap materials. Chemically synthesized cadmium sulfide (CdS) nanoparticles are deposited on Si substrate and exhibits electroluminescence corresponding to different process treatment.
引用
收藏
页码：46 / 56
页数：11
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