ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers

被引：61

作者：

Ye, Z. Z. ^{[1
]}

Lu, J. G. ^{[1
]}

Zhang, Y. Z. ^{[1
]}

Zeng, Y. J. ^{[1
]}

Chen, L. L. ^{[1
]}

Zhuge, F. ^{[1
]}

Yuan, G. D. ^{[1
]}

He, H. P. ^{[1
]}

Zhu, L. P. ^{[1
]}

Huang, J. Y. ^{[1
]}

Zhao, B. H. ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 11期

关键词：

D O I：

10.1063/1.2783262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO homojunction light-emitting diodes (LEDs), comprised of N-Al codoped p-type ZnO and Al-doped n-type ZnO layers, were fabricated on Si substrates with homobuffer layers. The current-voltage measurements showed typical diode characteristic with a threshold voltage of about 3.3 V. The electroluminescence (EL) bands at 110 K consisted of a near-band-edge emission at 3.18 eV and a deep level emission at 2.58 eV. The EL emissions were assigned as radiative recombinations, presumably of donor-acceptor pairs, in the p-type layer of the LED. The quenching of EL with temperature was attributed to the degradation of p-type conducting of the ZnO:(N,Al) layer.

引用

页数：3

共 50 条

[1] GaN/ZnO Nanotube Heterostructure Light-Emitting Diodes Fabricated on Si
Lee, Chul-Ho
Hong, Young Joon
Kim, Yong-Jin
Yoo, Jinkyoung
Baek, Hyeonjun
Jeon, Seong-Ran
Lee, Seung-Jae
Yi, Gyu-Chul
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (04) : 966 - 970
[2] Light-emitting diodes with nickel substrates fabricated by electroplating
Chang, PH
Chen, NC
Wang, YN
Shih, CF
Wu, MH
Yang, TH
Tzou, YH
Wang, SJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (06): : L22 - L24
[3] Blue Light-Emitting Diodes Grown on ZnO Substrates
Xia, Yuanyang
Brault, Julien
Damilano, Benjamin
Chenot, Sebastien
Vennegues, Philippe
Nemoz, Maud
Teisseire, Monique
Leroux, Mathieu
Obrecht, Remy
Robin, Ivan-Christophe
Santailler, Jean-Louis
Feuillet, Guy
Chauveau, Jean-Michel
[J]. APPLIED PHYSICS EXPRESS, 2013, 6 (04)
[4] InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
Deng, Dongmei
Yu, Naisen
Wang, Yong
Zou, Xinbo
Kuo, Hao-Chung
Chen, Peng
Lau, Kei May
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (20)
[5] ZnO nanorod light-emitting diodes fabricated by electrochemical approaches
Guo, Honghui
Zhou, Jianzhang
Lin, Zhonghua
[J]. ELECTROCHEMISTRY COMMUNICATIONS, 2008, 10 (01) : 146 - 150
[6] Efficient organic light-emitting diodes fabricated on cellulose nanocrystal substrates
Najafabadi, E.
Zhou, Y. H.
Knauer, K. A.
Fuentes-Hernandez, C.
Kippelen, B.
[J]. APPLIED PHYSICS LETTERS, 2014, 105 (06)
[7] Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates
Bour, DP
Nickel, NM
Van de Walle, CG
Kneissl, MS
Krusor, BS
Mei, P
Johnson, NM
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (16) : 2182 - 2184
[8] Light-emitting diodes fabricated on nanopatterned sapphire substrates by thermal lithography
Shinagawa, Taku
Abe, Yuki
Matsumoto, Hiroyuki
Li, BoCheng
Murakami, Kazuma
Okada, Narihito
Tadatomo, Kazuyuki
Kannaka, Masato
Fujii, Hideo
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
[9] AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding
Horng, RH
Wuu, DS
Wei, SC
Tseng, CY
Huang, MF
Chang, KH
Liu, PH
Lin, KC
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (20) : 3054 - 3056
[10] Flexible substrates with polyimide buffer layers for organic light-emitting diodes
Chang, C
Wang, LD
Li, Y
Duan, L
Qiu, Y
[J]. CHINESE PHYSICS LETTERS, 2004, 21 (04) : 744 - 746

← 1 2 3 4 5 →