NUCLEATION AND GROWTH OF OXIDE PRECIPITATES IN SILICON IMPLANTED WITH OXYGEN.

被引：0

作者：

Stoemenos, J. ^{[1
]}

Margail, J. ^{[1
]}

机构：

[1] Aristotle Univ of Thessaloniki, Thessaloniki, Greece, Aristotle Univ of Thessaloniki, Thessaloniki, Greece

来源：

Thin Solid Films | 1986年 / 135卷 / 01期

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D O I：

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学科分类号：

摘要：

SEMICONDUCTING SILICON

引用

页码：115 / 127

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