Effect of vacancies on nucleation of oxide precipitates in silicon

被引：26
|
作者：
Voronkov, VV
Falster, R
机构：
[1] MEMC Elect Mat, I-39012 Merano, BZ, Italy
[2] MEMC Elect Mat, I-28100 Novara, Italy
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2002年 / 5卷 / 4-5期
关键词：
silicon; oxygen; vacancy; nucleation; precipitation;
D O I：
10.1016/S1369-8001(02)00119-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The use of installed, tailored vacancy concentration profiles (MDZ(R)) to control oxygen precipitation behavior in silicon wafers has become an important technology for the 300 mm era. This paper presents a new model of one of the central physical processes important to the MDZ(R) system: of the role played by vacancies to control the nucleation of oxygen precipitates. Steady-state nucleation of oxide precipitates is described as a random walk in a 2D space of the two basic size variables of an oxygen cluster: the number n of agglomerated oxygen atoms, and the number m of consumed vacancies. The model can account well for the basic experimental results: a high sensitivity of the nucleation rate to the vacancy concentration and a low sensitivity to the oxygen content. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：387 / 390
页数：4
相关论文
共 50 条
  • [1] NUCLEATION AND GROWTH OF OXIDE PRECIPITATES IN SILICON
    SCHAAKE, HF
    PINIZZOTTO, RF
    BABER, SC
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C94 - C94
  • [2] EXCESS VACANCIES AND NUCLEATION OF PRECIPITATES IN ALUMINUM-SILICON ALLOYS
    OZAWA, E
    KIMURA, H
    [J]. ACTA METALLURGICA, 1970, 18 (09): : 995 - &
  • [3] Nucleation of oxide precipitates in vacancy-containing silicon
    Voronkov, VV
    Falster, R
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (09) : 5802 - 5810
  • [4] NUCLEATION AND GROWTH OF OXIDE PRECIPITATES IN SILICON IMPLANTED WITH OXYGEN
    STOEMENOS, J
    MARGAIL, J
    [J]. THIN SOLID FILMS, 1986, 135 (01) : 115 - 127
  • [5] Effect of vacancies on the nucleation of Cr precipitates at grain boundary in α-Fe
    Dai, Y. Y.
    Yang, L.
    Nie, J. L.
    Peng, S. M.
    Long, X. G.
    Zhou, X. S.
    Zu, X. T.
    Liu, L.
    Gao, F.
    [J]. CANADIAN JOURNAL OF PHYSICS, 2019, 97 (08) : 842 - 846
  • [6] Nucleation of Nickel Disilicide Precipitates in Float-Zone Silicon: The Role of Vacancies
    Saring, Philipp
    Abrosimov, Nikolay, V
    Seibt, Michael
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (17):
  • [7] BEHAVIOR OF EXCESS VACANCIES DURING NUCLEATION OF PRECIPITATES IN ALUMINUM-SILICON ALLOYS
    OZAWA, E
    KIMURA, H
    [J]. MATERIALS SCIENCE AND ENGINEERING, 1971, 8 (06): : 327 - &
  • [8] Effect of oxide vacancies on metal island nucleation
    Bogicevic, A
    Jennison, DR
    [J]. SURFACE SCIENCE, 2002, 515 (2-3) : L481 - L486
  • [9] THE NUCLEATION KINETICS OF PLATELIKE OXIDE PRECIPITATES IN CZ-SILICON
    JABLONSKI, J
    WOJCIECHOWSKI, J
    KUCHARSKI, K
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 105 (01): : 113 - 121
  • [10] HOMOGENEOUS NUCLEATION OF OXIDE PRECIPITATES IN CZOCHRALSKI-GROWN SILICON
    OSAKA, J
    INOUE, N
    WADA, K
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 288 - 290
12345