NUCLEATION AND GROWTH OF OXIDE PRECIPITATES IN SILICON IMPLANTED WITH OXYGEN

被引：23
|
作者：
STOEMENOS, J [1 ]
MARGAIL, J [1 ]
机构：
[1] CEN,ETUD & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE
来源：
THIN SOLID FILMS | 1986年 / 135卷 / 01期
关键词：
D O I：
10.1016/0040-6090(86)90094-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：115 / 127
页数：13
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