Effect of vacancies on nucleation of oxide precipitates in silicon

被引：26
|
作者：
Voronkov, VV
Falster, R
机构：
[1] MEMC Elect Mat, I-39012 Merano, BZ, Italy
[2] MEMC Elect Mat, I-28100 Novara, Italy
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2002年 / 5卷 / 4-5期
关键词：
silicon; oxygen; vacancy; nucleation; precipitation;
D O I：
10.1016/S1369-8001(02)00119-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The use of installed, tailored vacancy concentration profiles (MDZ(R)) to control oxygen precipitation behavior in silicon wafers has become an important technology for the 300 mm era. This paper presents a new model of one of the central physical processes important to the MDZ(R) system: of the role played by vacancies to control the nucleation of oxygen precipitates. Steady-state nucleation of oxide precipitates is described as a random walk in a 2D space of the two basic size variables of an oxygen cluster: the number n of agglomerated oxygen atoms, and the number m of consumed vacancies. The model can account well for the basic experimental results: a high sensitivity of the nucleation rate to the vacancy concentration and a low sensitivity to the oxygen content. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：387 / 390
页数：4
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