NUCLEATION AND GROWTH OF OXIDE PRECIPITATES IN SILICON IMPLANTED WITH OXYGEN.

被引：0

作者：

Stoemenos, J. ^{[1
]}

Margail, J. ^{[1
]}

机构：

[1] Aristotle Univ of Thessaloniki, Thessaloniki, Greece, Aristotle Univ of Thessaloniki, Thessaloniki, Greece

来源：

Thin Solid Films | 1986年 / 135卷 / 01期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTING SILICON

引用

页码：115 / 127

共 50 条

[31] Nucleation and growth behavior of Cu-Al precipitates in He implanted and annealed aluminum
Feldmann, G
Fichtner, PFP
Zawislak, FC
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 432 - 436
[32] On the impact of interface energy and vacancy concentration on morphology changes and nucleation of silicon oxide precipitates in silicon
Appl Phys Lett, 24 (3413):
[33] On the impact of interface energy and vacancy concentration on morphology changes and nucleation of silicon oxide precipitates in silicon
Vanhellemont, J
APPLIED PHYSICS LETTERS, 1996, 68 (24) : 3413 - 3415
[34] THIN BURIED OXIDE IN OXYGEN-IMPLANTED SILICON
SPAGGIARI, C
BERTONI, S
CEROFOLINI, GF
FUMAGALLI, P
MEDA, L
CERAMICS INTERNATIONAL, 1993, 19 (06) : 399 - 405
[35] Nucleation and growth of tetracene films on silicon oxide
Shi, J.
Qin, X. R.
PHYSICAL REVIEW B, 2008, 78 (11)
[36] NUCLEATION TEMPERATURE OF LARGE OXIDE PRECIPITATES IN AS-GROWN CZOCHRALSKI SILICON CRYSTAL
WADA, K
NAKANISHI, H
TAKAOKA, H
INOUE, N
JOURNAL OF CRYSTAL GROWTH, 1982, 57 (03) : 535 - 540
[37] Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen
Ono, H
Ikarashi, T
Ogura, A
APPLIED PHYSICS LETTERS, 1998, 72 (22) : 2853 - 2855
[38] OPTIMAL NUCLEATION-GROWTH OF OXIDE PRECIPITATES FOR THE INTRINSIC GETTERING ACTIVATION
VERON, A
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C132 - C132
[39] STRUCTURE OF SILICON-CARBIDE PRECIPITATES IN OXYGEN-IMPLANTED AND ANNEALED SILICON-ON-INSULATOR MATERIAL
KRAUSE, SJ
JUNG, CO
WILSON, SR
APPLIED PHYSICS LETTERS, 1988, 53 (01) : 63 - 65
[40] Simulation of growth kinetics of octahedral and platelike oxygen precipitates in silicon
Svetukhin, VV
Grishin, AG
Prikhod'ko, OV
SEMICONDUCTORS, 2003, 37 (07) : 843 - 845

← 1 2 3 4 5 →