NUCLEATION AND GROWTH OF OXIDE PRECIPITATES IN SILICON IMPLANTED WITH OXYGEN.

被引：0
|
作者：
Stoemenos, J. [1 ]
Margail, J. [1 ]
机构：
[1] Aristotle Univ of Thessaloniki, Thessaloniki, Greece, Aristotle Univ of Thessaloniki, Thessaloniki, Greece
来源：
Thin Solid Films | 1986年 / 135卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING SILICON
引用
收藏
页码：115 / 127
相关论文
共 50 条
  • [41] Nucleation and growth of {113} defects and {111} dislocation loops in silicon-implanted silicon
    Pan, GZ
    Tu, KN
    DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 431 - 436
  • [42] Simulation of growth kinetics of octahedral and platelike oxygen precipitates in silicon
    V. V. Svetukhin
    A. G. Grishin
    O. V. Prikhod’ko
    Semiconductors, 2003, 37 : 843 - 845
  • [43] THE NUCLEATION AND GROWTH-MORPHOLOGY OF NICKEL IMPURITY PRECIPITATES IN SILICON-WAFERS
    AUGUSTUS, PD
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (67): : 229 - 234
  • [44] SELF-INTERSTITIAL MIGRATION IN Si IMPLANTED WITH OXYGEN.
    Stoemenos, J.
    Margail, J.
    Dupuy, M.
    Jaussaud, C.
    Physica Scripta, 1987, 35 (01) : 42 - 44
  • [45] DIFFUSION-LIMITED GROWTH OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON
    WADA, K
    INOUE, N
    KOHRA, K
    JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) : 749 - 752
  • [46] Behavior of oxide precipitates in Czochralski silicon during crystal growth
    Sumitomo Metal Ind Ltd, Hyogo, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 9 A (4599-4605):
  • [47] ANALYSIS OF OXIDE LAYERS ON SILICON AND OBSERVATION OF ENHANCED OXIDE GROWTH ON IMPLANTED SILICON SAMPLES
    GYULAI, J
    MEYER, O
    MAYER, JW
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (12): : 1160 - &
  • [48] The system copper: Cupric oxide: Oxygen.
    Roberts, HS
    Smyth, FH
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1921, 43 : 1061 - 1079
  • [49] Nucleation and growth of Si nanowires from silicon oxide
    Wang, N
    Tang, YH
    Zhang, YF
    Lee, CS
    Lee, ST
    PHYSICAL REVIEW B, 1998, 58 (24) : 16024 - 16026
  • [50] STOICHIOMETRY OF OXYGEN PRECIPITATES IN SILICON
    PIVAC, B
    BORGHESI, A
    GEDDO, M
    SASSELLA, A
    STELLA, A
    APPLIED SURFACE SCIENCE, 1993, 63 (1-4) : 245 - 248
12345