Growth of 3C-SiC layers on Si substrates with a novel stress relaxation structure

被引：0
|
作者：
Irokawa, Y. [1 ]
Kodama, M. [1 ]
Kachi, T. [1 ]
机构：
[1] Toyota Ctrl. Res. Devmt. Lab. Inc., Nagakute, Aichi 480-1192, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 10期
关键词：
Chemical vapor deposition - Crystal structure - Current voltage characteristics - Epitaxial growth - Raman spectroscopy - Semiconducting silicon - Silicon carbide - Stress relaxation;
D O I：
10.1143/jjap.40.5907
中图分类号：
学科分类号：
摘要：
Silicon (Si) substrates having cavities immediately beneath the surface layer were used as a stress relaxation structure in 3C-SiC heteroepitaxial growth on Si substrates. Single crystalline 3C-SiC layers were grown on these Si substrates by means of low pressure chemical vapor deposition (LPCVD). The layers' quality was characterized by micro-Raman spectroscopy and current-voltage (I-V) characteristics. These results revealed that this structure improved the crystal quality in the 3C-SiC layers.
引用
收藏
页码：5907 / 5908
相关论文
共 50 条
  • [21] How to grow unstrained 3C-SiC heteroepitaxial layers on Si (100) substrates
    Chassagne, T
    Ferro, G
    Gourbeyre, C
    Le Berre, M
    Barbier, D
    Monteil, Y
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 155 - 158
  • [22] 3C-SiC growth on (001) Si substrates by using a multilayer buffer
    Canino, Andrea
    Severino, Andrea
    Piluso, Nicolo
    La Via, Francesco
    Privitera, Stefania
    Alberti, Alessandra
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 263 - +
  • [23] 3C-SiC on Si Substrates using Pendeo-Epitaxial Growth
    Kim, Byeung C.
    Capano, Michael A.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 219 - 222
  • [24] Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates
    Cordier, Yvon
    Portail, Marc
    Chenot, Sebastien
    Tottereau, Olivier
    Zielinski, Marcin
    Chassagne, Thierry
    ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES, 2008, 1068 : 57 - +
  • [25] Novel Electrical Characterization of Thin 3C-SiC Films on Si Substrates
    Tanner, P.
    Wang, L.
    Dimitrijev, S.
    Han, J.
    Iacopi, A.
    Hold, L.
    Walker, G.
    SCIENCE OF ADVANCED MATERIALS, 2014, 6 (07) : 1542 - 1547
  • [26] Growth of 3C-SiC on Si(100) by LPCVD and patterning of the grown layers
    Bakin, A
    Behrens, I
    Ivanov, A
    Peiner, E
    Piester, D
    Wehmann, HH
    Schlachetzki, A
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 327 - 330
  • [27] Growth of 3C-SiC on Si(100) by LPCVD and patterning of the grown layers
    Bakin, A.
    Behrens, I.
    Ivanov, A.
    Peiner, E.
    Piester, D.
    Wehmann, H.-H.
    Schlachetzki, A.
    Materials Science Forum, 2002, 389-393 (01) : 327 - 330
  • [28] Evaluation of carbonized layers for 3C-SiC/Si epitaxial growth by ellipsometry
    Shimizu, H
    Ohba, T
    Hisada, K
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 335 - 338
  • [29] Homoepitaxial growth of 3C-SiC on 3C-SiC substrates grown by sublimation method
    Nishino, K
    Kimoto, T
    Matsunami, H
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 89 - 92
  • [30] CVD growth of 3C-SiC layers on 4H-SiC substrates with improved morphology
    Li, Xun
    Wang, Guohao
    SOLID STATE COMMUNICATIONS, 2023, 371
12345