Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

被引：0

作者：

Cordier, Yvon ^{[1
]}

Portail, Marc ^{[1
]}

Chenot, Sebastien ^{[1
]}

Tottereau, Olivier ^{[1
]}

Zielinski, Marcin ^{[2
]}

Chassagne, Thierry ^{[2
]}

机构：

[1] CNRS, CRHEA, Rue Bernard Gregory, F-06560 Valbonne, France

[2] Novasic, Savoie Technolac, F-73375 Le Bourget Du Lac, France

来源：

ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES | 2008年 / 1068卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we study cubic SiC/Si (111) templates as an alternative for growing GaN on silicon. We first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. Then, AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these templates. Both the structural quality and the behavior of transistors realized on these structures show the feasibility of this approach.

引用

页码：57 / +

页数：2

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