Growth of 3C-SiC layers on Si substrates with a novel stress relaxation structure

被引：0

作者：

Irokawa, Y. ^{[1
]}

Kodama, M. ^{[1
]}

Kachi, T. ^{[1
]}

机构：

[1] Toyota Ctrl. Res. Devmt. Lab. Inc., Nagakute, Aichi 480-1192, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 10期

关键词：

Chemical vapor deposition - Crystal structure - Current voltage characteristics - Epitaxial growth - Raman spectroscopy - Semiconducting silicon - Silicon carbide - Stress relaxation;

D O I：

10.1143/jjap.40.5907

中图分类号：

学科分类号：

摘要：

Silicon (Si) substrates having cavities immediately beneath the surface layer were used as a stress relaxation structure in 3C-SiC heteroepitaxial growth on Si substrates. Single crystalline 3C-SiC layers were grown on these Si substrates by means of low pressure chemical vapor deposition (LPCVD). The layers' quality was characterized by micro-Raman spectroscopy and current-voltage (I-V) characteristics. These results revealed that this structure improved the crystal quality in the 3C-SiC layers.

引用

页码：5907 / 5908

共 50 条

[41] Slow photoconductivity decay in 3C-SiC on Si substrates
Ichimura, M
Yamada, N
Tajiri, H
Arai, E
JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) : 2727 - 2731
[42] Epitaxial growth of 3C-SiC on T-shape columnar Si substrates
Nishino, S
Shoji, A
Nishiguchi, T
Ohshima, S
SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 2004, 815 : 65 - 70
[43] Lateral over-growth of 3C-SiC on patterned Si(111) substrates
Nishino, S
Jacob, C
Okui, Y
Ohshima, S
Masuda, Y
JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) : 1250 - 1253
[44] Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates
Sun Guo-Sheng
Liu Xing-Fang
Wang Lei
Zhao Wan-Shun
Yang Ting
Wu Hai-Lei
Yan Guo-Guo
Zhao Yong-Mei
Ning Jin
Zeng Yi-Ping
Li Jin-Min
CHINESE PHYSICS B, 2010, 19 (08)
[45] MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substrates
Wei, CH
Xie, ZY
Li, LY
Yu, QM
Edgar, JH
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (03) : 317 - 321
[46] MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substrates
C. H. Wei
Z. Y. Xie
L. Y. Li
Q. M. Yu
J. H. Edgar
Journal of Electronic Materials, 2000, 29 : 317 - 321
[47] Crystallinity of 3C-SiC films grown on Si substrates
Yagi, K.
Nagasawa, H.
Materials Science Forum, 1998, 264-268 (pt 1): : 191 - 194
[48] Heteroepitaxial growth and characterization of 3C-SiC films on Si substrates using LPVCVD
Zheng, HW
Zhu, JJ
Fu, ZX
Lin, BX
Li, XG
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2005, 21 (04) : 536 - 540
[49] Channel epitaxy of 3C-SiC on si substrates by CVD
Nishino, S
Okui, Y
Jacob, C
Ohshima, S
SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 15 - 22
[50] Stresses in 3C-SiC films grown on Si substrates
Jacob, Chacko
Pirouz, Pirouz
IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 1999, : 275 - 278

← 1 2 3 4 5 →