Stresses in 3C-SiC films grown on Si substrates

被引:0
|
作者
Jacob, Chacko [1 ]
Pirouz, Pirouz [1 ]
机构
[1] Case Western Reserve Univ, Cleveland, United States
关键词
D O I
暂无
中图分类号
学科分类号
摘要
13
引用
收藏
页码:275 / 278
相关论文
共 50 条
  • [1] Crystallinity of 3C-SiC films grown on Si substrates
    Yagi, K.
    Nagasawa, H.
    Materials Science Forum, 1998, 264-268 (pt 1): : 191 - 194
  • [2] Crystallinity of 3C-SiC films grown on Si substrates
    Yagi, K
    Nagasawa, H
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 191 - 194
  • [3] Raman determination of stresses and strains in 3C-SiC films grown on 6-inch Si substrates
    Hagiwara, C
    Itoh, KM
    Muto, J
    Nagasawa, H
    Yagi, K
    Harima, H
    Mizoguchi, K
    Nakashima, S
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 669 - 672
  • [4] 3C-SiC Films Grown on Si(111) Substrates as a Template for Graphene Epitaxy
    Fanton, M. A.
    Robinson, J. A.
    Weiland, B. E.
    Moon, J.
    GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, 2009, 19 (05): : 131 - +
  • [5] Residual stress in CVD-grown 3C-SiC films on Si substrates
    Volinsky, Alex A.
    Kravchenko, Grygoriy
    Waters, Patrick
    Reddy, Jayadeep Deva
    Locke, Chris
    Frewin, Christopher
    Saddow, Stephen E.
    SILICON CARBIDE 2008 - MATERIALS, PROCESSING AND DEVICES, 2008, 1069 : 109 - +
  • [6] 3C-SiC monocrystals grown on undulant Si(001) substrates
    Nagasawa, H
    Yagi, K
    Kawhara, T
    Hatta, N
    SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 47 - 58
  • [7] Search for midgap levels in 3C-SiC grown on Si substrates
    Yamada, N
    Kato, M
    Ichimura, M
    Arai, E
    Tokuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (10A): : L1094 - L1095
  • [8] Structural characterization of 3C-SiC films grown on Si layers wafer bonded to polycrystalline SiC substrates
    Myers, RL
    Hobart, KD
    Twigg, M
    Rao, S
    Fatemi, M
    Kub, FJ
    Saddow, SE
    SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 2004, 815 : 145 - 148
  • [9] Spectroscopic ellipsometry of 3C-SiC thin films grown on Si substrates using organosilane sources
    Kubo, N
    Moritani, A
    Kitahara, K
    Asahina, S
    Kanayama, N
    Tsutsumi, K
    Suzuki, M
    Nishino, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A): : 4015 - 4018
  • [10] 3C-SiC single-crystal films grown on 6-inch Si substrates
    Nagasawa, H
    Yagi, K
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 202 (01): : 335 - 358