Stresses in 3C-SiC films grown on Si substrates

被引:0
|
作者
Jacob, Chacko [1 ]
Pirouz, Pirouz [1 ]
机构
[1] Case Western Reserve Univ, Cleveland, United States
关键词
D O I
暂无
中图分类号
学科分类号
摘要
13
引用
收藏
页码:275 / 278
相关论文
共 50 条
  • [31] Gold films epitaxially grown by diffusion at the 3C-SiC/Si interface
    Komninou, Ph.
    Stoemenos, J.
    Nouet, G.
    Karakostas, Th.
    Journal of Crystal Growth, 1999, 203 (01): : 103 - 112
  • [32] Low specific contact resistance to 3C-SiC grown on (100) Si substrates
    Bazin, A. E.
    Chassagne, T.
    Michaud, J. F.
    Leycuras, A.
    Portail, M.
    Zielinski, M.
    Ollard, E.
    Alquier, D.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 721 - +
  • [33] Surface morphology of 3C-SiC heteroepitaxial layers grown by LPCVD on Si substrates
    Takahashi, T
    Ishida, Y
    Okumura, H
    Yoshida, S
    Sekigawa, T
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 207 - 210
  • [34] Surface morphology of 3C-SiC heteroepitaxial layers grown by LPCVD on Si substrates
    Takahashi, T.
    Ishida, Y.
    Okumura, H.
    Yoshida, S.
    Sekigawa, T.
    Materials Science Forum, 1998, 264-268 (pt 1): : 207 - 210
  • [35] Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates
    Watts, Bernard E.
    Attolini, Giovanni
    Besagni, Tullo
    Bosi, Matteo
    Ferrari, Claudio
    Rossi, Francesca
    Riesz, Ferenc
    Jiang, Liudi
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 137 - +
  • [36] 3C-SiC film growth on Si substrates
    Severino, A.
    Locke, C.
    Anzalone, R.
    Camarda, M.
    Piluso, N.
    La Magna, A.
    Saddow, S. E.
    Abbondanza, G.
    D'Arrigo, G.
    La Via, F.
    WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 12, 2011, 35 (06): : 99 - 116
  • [37] Fabrication and characterization of MOS devices on 3C-SiC films grown by reactive magnetron sputtering on Si(111) substrates
    Wahab, Q
    Turan, R
    Hultman, L
    Willander, M
    Sundgren, JE
    THIN SOLID FILMS, 1996, 287 (1-2) : 252 - 257
  • [38] MOS capacitor characteristics of 3C-SiC films deposited on Si substrates at 1270°C
    Wang, Li
    Dimitrijev, Sima
    Hold, Leonie
    Kong, Frederick
    Tanner, Philip
    Han, Jisheng
    Wagner, Gunter
    SILICON CARBIDE 2008 - MATERIALS, PROCESSING AND DEVICES, 2008, 1069 : 239 - +
  • [40] Optical investigation of bulk electron mobility in 3C-SiC films on Si substrates
    Piluso, N.
    Severino, A.
    Camarda, M.
    Canino, A.
    La Magna, A.
    La Via, F.
    APPLIED PHYSICS LETTERS, 2010, 97 (14)