CVD growth of 3C-SiC layers on 4H-SiC substrates with improved morphology

被引：2
|
作者：
Li, Xun [1 ]
Wang, Guohao [1 ]
机构：
[1] Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300401, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2023年 / 371卷
基金：
中国国家自然科学基金;
关键词：
3C-SiC; Chemical vapor deposition; Chlorinated precursor; Epitaxial growth; CHLORIDE-BASED CVD; EPITAXIAL LAYERS;
D O I：
10.1016/j.ssc.2023.115289
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Chloride-based CVD growth of 3C-SiC epitaxial layers on on-axis 4H-SiC substrates has been studied using chloromethane and silane as precursors. Hydrogen chloride is utilized as additional chlorine source. Process parameters, such as growth temperature, C/Si ratio, Cl/Si ratio and temperature ramp-up condition, are inves-tigated. Smooth 3C-SiC layers without DPB defects on the surface could be obtained with optimized process at a growth rate of 14 & mu;m/h. Low temperature photoluminescence measurement shows sharp near bandgap emission, which verifies the good optical properties of the epitaxial layer. The growth window is wide in this process by using chlorinated precursors compared to the standard chemistry.
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页数：4
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