DIFFUSION OF NICKEL IN SILICON UNDER CONDITIONS OF THE ACTION OF A CONCENTRATED LUMINOUS FLUX.

The authors are investigating experimentally the process of compensation of silicon with a nickel impurity under conditions of the action of a concentrated flux of photons. A dependence has been found of the depth of compensation on the spectral composition of incident radiation. Diffusion of nickel was carried out from a chemically deposited layer on the surface of silicon wafers 10 multiplied by 6 multiplied by 1. 2 mm, over the course of 10-30 min, in open air. Dependence of the Si(Ni) specimens' resistivity on compensation depth with various diffusion times is shown.