Simulating diffusion processes upon thermal annealing of silicon under oxidation conditions

被引：0
|
作者：
Burenkov, A.F. [1 ]
Korzyuk, V.I. [1 ]
Mozolevskii, I.E. [1 ]
Cheb, E.S. [1 ]
机构：
[1] Byelorussian State Univ, Minsk, Belarus
来源：
Physics, chemistry and mechanics of surfaces | 1993年 / 8卷 / 05期
关键词：
Diffusion redistribution;
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学科分类号：
摘要：
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页码：741 / 745
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