DIFFUSION OF NICKEL IN SILICON UNDER CONDITIONS OF THE ACTION OF A CONCENTRATED LUMINOUS FLUX.

被引：0
|
作者：
Dzhuliev, Kh.Kh.
Krevchik, V.D.
Muminov, R.A.
Mamadalimov, A.T.
Makhkamov, Sh.
Nigmanov, O.
机构：
来源：
Applied Solar Energy (English translation of Geliotekhnika) | 1986年 / 22卷 / 01期
关键词：
NICKEL AND ALLOYS - Diffusion - PHOTONS - SOLAR CELLS;
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中图分类号：
学科分类号：
摘要：
The authors are investigating experimentally the process of compensation of silicon with a nickel impurity under conditions of the action of a concentrated flux of photons. A dependence has been found of the depth of compensation on the spectral composition of incident radiation. Diffusion of nickel was carried out from a chemically deposited layer on the surface of silicon wafers 10 multiplied by 6 multiplied by 1. 2 mm, over the course of 10-30 min, in open air. Dependence of the Si(Ni) specimens' resistivity on compensation depth with various diffusion times is shown.
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页码：86 / 88
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