LAG PROPERTIES OF SILICON p-i-n PHOTODIODES.

被引：0
|
作者：
Trishenkov, M.A.
Khakuashev, P.Ye.
机构：
来源：
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika) | 1984年 / 29卷 / 07期
关键词：
MATHEMATICAL TECHNIQUES - Numerical Analysis - RADIATION DETECTORS - Theory - SEMICONDUCTING SILICON - Testing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A method is presented for calculating the transient characteristics of the photocurrent during carrier drift in the space-charge region of a photodiode in the most general case of an arbitrary absorption coefficient, field distribution, and illumination on the side of n- or p-layer. The calculation reduces to that of solving a system of transcendental equations containing quadratures. Numerical calculations of the transient characteristics are made for silicon p-i-n photodiodes. An analysis of these characteristics shows that in the cases of practical importance they can be approximated by one exponential relationship with a time constant t//0//. //6//3; therefore, the lag of silicon p-i-n photodiodes can be described by this time constant. Graphs showing its calculation are presented.
引用
收藏
页码：131 / 140
相关论文
共 50 条
  • [1] SILICON p-i-n PHOTODIODES.
    Todokoro, Yoshihiro
    Iwasa, Hitoo
    National Technical Report (Matsushita Electric Industry Company), 1976, 22 (01): : 19 - 28
  • [2] SEMICONDUCTOR SILICON PHOTODIODES WITH A P-I-N STRUCTURE
    KONDRATENKOV, YB
    KONDRATE.LM
    MEDVEDEV, MN
    PRIBORY I TEKHNIKA EKSPERIMENTA, 1973, (03): : 85 - 87
  • [3] Effects of radiation damage in silicon p-i-n photodiodes
    McPherson, M
    Jones, BK
    Sloan, T
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (10) : 1187 - 1194
  • [4] Analytic time domain characterization of p-i-n photodiodes. Effects of drift, diffusion, recombination, and absorption
    1600, (71):
  • [5] THIN SILICON ION-IMPLANTED P-I-N PHOTODIODES
    PLUMB, RG
    CARROLL, JE
    IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1977, 1 (03): : 89 - 91
  • [6] Low-temperature amorphous silicon p-i-n photodiodes
    Street, Robert A.
    Wong, William S.
    Lujan, Rene
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (08): : 1854 - 1857
  • [7] AM-to-PM Conversion in Silicon p-i-n Photodiodes
    Kang, Lanbing
    Kolner, Brian H.
    2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2016,
  • [8] Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes
    Kukurudziak, M.S.
    Semiconductor Physics, Quantum Electronics and Optoelectronics, 2022, 25 (04): : 385 - 393
  • [9] Influence of Chromium Sublayer on Silicon P-I-N Photodiodes Responsivity
    Kukurudziak, M. S.
    Maistruk, Sciences E., V
    FIFTEENTH INTERNATIONAL CONFERENCE ON CORRELATION OPTICS, 2021, 12126
  • [10] Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes
    Kukurudziak, M. S.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2022, 25 (04) : 385 - 393
12345