Analytic time domain characterization of p-i-n photodiodes. Effects of drift, diffusion, recombination, and absorption

被引：0
|
作者：
机构：
来源：
| 1600年 / 71期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 46 条
  • [1] ANALYTIC TIME DOMAIN CHARACTERIZATION OF P-I-N PHOTODIODES - EFFECTS OF DRIFT, DIFFUSION, RECOMBINATION, AND ABSORPTION
    LEE, JW
    KIM, DM
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (06) : 2950 - 2958
  • [2] SILICON p-i-n PHOTODIODES.
    Todokoro, Yoshihiro
    Iwasa, Hitoo
    National Technical Report (Matsushita Electric Industry Company), 1976, 22 (01): : 19 - 28
  • [3] LAG PROPERTIES OF SILICON p-i-n PHOTODIODES.
    Trishenkov, M.A.
    Khakuashev, P.Ye.
    Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1984, 29 (07): : 131 - 140
  • [4] Modeling and characterization of GaN p-i-n photodiodes
    Deng, Jie
    Halder, Subrata
    Hwang, James C. M.
    Hertog, Brian
    Xie, Junqing
    Dabiran, Amir
    Osinsky, Andrei
    INFRARED AND PHOTOELECTRONIC IMAGERS AND DETECTOR DEVICES II, 2006, 6294
  • [5] Absorption saturation nonlinearity in InGaAs/InP p-i-n photodiodes
    Juodawlkis, PW
    O'Donnell, FJ
    Hargreaves, JJ
    Oakley, DC
    Napoleone, A
    Groves, SH
    Mahoney, LJ
    Molvar, KM
    Missaggia, LJ
    Donnelly, JP
    Williamson, RC
    Twichell, JC
    2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2002, : 426 - 427
  • [6] Transit-time limitations in p-i-n photodiodes
    Sibley, MJN
    Bellon, J
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2000, 26 (05) : 282 - 286
  • [7] Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes
    Kukurudziak, M.S.
    Semiconductor Physics, Quantum Electronics and Optoelectronics, 2022, 25 (04): : 385 - 393
  • [8] Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes
    Kukurudziak, M. S.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2022, 25 (04) : 385 - 393
  • [9] Transient response of high-speed p-i-n photodiodes including diffusion effects
    George, G.
    Krusius, J.P.
    Solid-State Electronics, 1994, 37 (11): : 1841 - 1847
  • [10] Effects of radiation damage in silicon p-i-n photodiodes
    McPherson, M
    Jones, BK
    Sloan, T
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (10) : 1187 - 1194
12345