INTRINSIC STRESS OF PHOSPHORUS- AND BORON-DOPED AMORPHOUS SILICON FILMS.

被引：0
|
作者：
Kakinuma, Hiroaki [1 ]
机构：
[1] Oki Electric Industry Co, Hachioji, Jpn, Oki Electric Industry Co, Hachioji, Jpn
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1988年 / 57卷 / 05期
关键词：
HYDROGEN - Bonding - SEMICONDUCTING FILMS - Doping - STRESSES;
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学科分类号：
摘要：
The relationship between the intrinsic stress and hydrogen-bonding configuration for plasma-produced hydrogenated amorphous silicon (a-Si:H) films doped with phosphorus and boron has been studied in the gas-phase doping ratios from 0 to 5 multiplied by 10** minus **3 prepared with different substrate temperatures. We found the same strong correlation between the sign and strength of intrinsic stress sigma //i and the infrared stretching-mode absorption ratio I(SiH//2)/I(SiH) ( equals R) as in a previous study on undoped films.
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页码：671 / 676
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