INTRINSIC STRESS OF PHOSPHORUS- AND BORON-DOPED AMORPHOUS SILICON FILMS.

被引：0

作者：

Kakinuma, Hiroaki ^{[1
]}

机构：

[1] Oki Electric Industry Co, Hachioji, Jpn, Oki Electric Industry Co, Hachioji, Jpn

来源：

Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1988年 / 57卷 / 05期

关键词：

HYDROGEN - Bonding - SEMICONDUCTING FILMS - Doping - STRESSES;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The relationship between the intrinsic stress and hydrogen-bonding configuration for plasma-produced hydrogenated amorphous silicon (a-Si:H) films doped with phosphorus and boron has been studied in the gas-phase doping ratios from 0 to 5 multiplied by 10** minus **3 prepared with different substrate temperatures. We found the same strong correlation between the sign and strength of intrinsic stress sigma //i and the infrared stretching-mode absorption ratio I(SiH//2)/I(SiH) ( equals R) as in a previous study on undoped films.

引用

页码：671 / 676

共 50 条

[21] Degenerate crystalline silicon films by aluminum-induced crystallization of boron-doped amorphous silicon
Hwang, J. D.
Luo, L. C.
Hsueh, T. J.
Hwang, S. B.
APPLIED PHYSICS LETTERS, 2012, 101 (15)
[22] THIN BORON-DOPED MICROCRYSTALLINE SILICON FILMS
SHEN, DS
BHAT, PK
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1993, 30 (02) : 139 - 145
[23] Extending the limits of screen-printed metallization of phosphorus- and boron-doped surfaces
Werner, Sabrina
Lohmueller, Elmar
Wolf, Andreas
Clement, Florian
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2016, 158 : 37 - 42
[24] Band offset in boron-doped amorphous silicon heterostructures
Hayashi, Tsukasa
Hazama, Yasushi
Miyazaki, Seiichi
Hirose, Masataka
Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 pt 2 (06):
[25] PHOTOINDUCED METASTABLE SURFACE EFFECTS IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON FILMS
AKER, B
FRITZSCHE, H
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6628 - 6633
[26] INFLUENCE OF DEPOSITION PARAMETERS ON THE PROPERTIES OF BORON-DOPED AMORPHOUS SILICON-CARBIDE FILMS
RAY, S
GANGULY, G
BARUA, AK
JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3917 - 3921
[27] Trap Exploration in Amorphous Boron-Doped ZnO Films
Chiu, Fu-Chien
Chiang, Wen-Ping
MATERIALS, 2015, 8 (09) : 5795 - 5805
[28] ELECTRON-DIFFRACTION STUDY OF THE STRUCTURE OF BORON-DOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
LIU, ZQ
MCKENZIE, DR
COCKAYNE, DJH
DWARTE, DM
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (06): : 753 - 761
[29] HIGH-TEMPERATURE DEPOSITION AND EVALUATION OF PHOSPHORUS-DOPED OR BORON-DOPED SILICON DIOXIDE FILMS
ADAMS, AC
CAPIO, CD
HASZKO, SE
PARISI, GI
POVILONIS, EI
ROBINSON, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 313 - 319
[30] MEASUREMENT OF FRACTURE-STRESS, YOUNG MODULUS, AND INTRINSIC STRESS OF HEAVILY BORON-DOPED SILICON MICROSTRUCTURES
NAJAFI, K
SUZUKI, K
THIN SOLID FILMS, 1989, 181 : 251 - 258

← 1 2 3 4 5 →