INTRINSIC STRESS OF PHOSPHORUS- AND BORON-DOPED AMORPHOUS SILICON FILMS.

被引：0
|
作者：
Kakinuma, Hiroaki [1 ]
机构：
[1] Oki Electric Industry Co, Hachioji, Jpn, Oki Electric Industry Co, Hachioji, Jpn
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1988年 / 57卷 / 05期
关键词：
HYDROGEN - Bonding - SEMICONDUCTING FILMS - Doping - STRESSES;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The relationship between the intrinsic stress and hydrogen-bonding configuration for plasma-produced hydrogenated amorphous silicon (a-Si:H) films doped with phosphorus and boron has been studied in the gas-phase doping ratios from 0 to 5 multiplied by 10** minus **3 prepared with different substrate temperatures. We found the same strong correlation between the sign and strength of intrinsic stress sigma //i and the infrared stretching-mode absorption ratio I(SiH//2)/I(SiH) ( equals R) as in a previous study on undoped films.
引用
收藏
页码：671 / 676
相关论文
共 50 条
  • [31] Properties of Boron-Doped Thin Films of Polycrystalline Silicon
    Merabet, Souad
    3RD INTERNATIONAL ADVANCES IN APPLIED PHYSICS AND MATERIALS SCIENCE CONGRESS, 2013, 1569 : 314 - 318
  • [32] BAND OFFSET IN BORON-DOPED AMORPHOUS-SILICON HETEROSTRUCTURES
    HAYASHI, T
    HAZAMA, Y
    MIYAZAKI, S
    HIROSE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (06): : L986 - L988
  • [33] SOME PROPERTIES OF INTRINSIC AND PHOSPHORUS DOPED AMORPHOUS-SILICON THIN-FILMS
    RAY, S
    CHAUDHURI, P
    BATABYAL, AK
    BARUA, AK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (01): : 23 - 28
  • [34] TRANSPORT PROPERTIES OF BORON-DOPED AMORPHOUS SILICON AND THEIR INTERPRETATION.
    Ghiassy, F.
    Jones, D.I.
    Stewart, A.D.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1985, 52 (02): : 139 - 152
  • [35] Electrooxidation and detection of aliphatic polyamines at boron-doped diamond thin films.
    Witek, MA
    Swain, GM
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2001, 222 : U88 - U88
  • [36] Hydrogen diffusion in boron-doped hydrogenated amorphous silicon films: Crystallization and induced structural changes
    Kail, F
    Hadjadj, A
    Cabarrocas, PRI
    SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES, 2005, 864 : 509 - 514
  • [37] THERMAL EQUILIBRATION IN BORON-DOPED HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY-FILMS
    HE, DY
    ZHANG, FQ
    CHEN, GH
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (01): : K49 - K52
  • [38] Interaction of phosphorus and boron in compensated amorphous silicon films
    Caputo, D
    de Cesare, G
    Palma, F
    Tucci, M
    Minarini, C
    Terzini, E
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 380 - 384
  • [39] Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide (vol 6, pg 287, 2016)
    Nomoto, Keita
    Gutsch, Sebastian
    Ceguerra, Anna V.
    Breen, Andrew
    Sugimoto, Hiroshi
    Fujii, Minoru
    Perez-Wurfl, Ivan
    Ringer, Simon P.
    Conibeer, Gavin
    MRS COMMUNICATIONS, 2016, 6 (04) : 469 - 469
  • [40] DETERMINING RETICULAR PARAMETER IN BORON-DOPED AND PHOSPHORUS-DOPED SILICON CRYSTALS
    CELOTTI, G
    ANGELUCC.R
    METALLURGIA ITALIANA, 1972, 64 (07): : 185 - &
12345