Hydrogen diffusion in boron-doped hydrogenated amorphous silicon films: Crystallization and induced structural changes

We have studied the evolution of the structure of boron-doped hydrogenated amorphous silicon films exposed to a hydrogen plasma. From the early stages of exposure, hydrogen diffuses and forms a thick H-rich subsurface. At longer times, hydrogen plasma leads to the formation of a microcrystalline layer via chemical transport without crystallization of the initial layer. We observe that the hydrogen content increases in the films during a plasma exposure and once the microcrystalline layer is formed hydrogen diffuses out of the sample accompanied with a decrease in the boron content. This effect can be attributed to the electric field developed within the heterojunction a-Si:H/mu c-Si:H that drives the positively charged hydrogen atoms in the boron-doped layer towards the mu c-Si:H layer.