PHOTOCONDUCTIVITY AND DENSITY OF STATES IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON

Investigations were made of the photoconductivity and dark conductivity of a-Si:H doped with boron by ion implantation and from the vapor phase. The conductivity was determined as a function of the dopant concentration. The Urbach parameter and the defect absorption by the investigated samples was also studied. The product (mu-tau)(n),(p) representing samples lightly doped with boron ("intrinsic" samples) depended weakly on the doping method. The Urbach parameter and the defect absorption by the doped samples were functions of the Fermi level position in the mobility gap.