INVESTIGATION OF THE ANISOTROPY OF THE ELECTRON DRAG BY PHONONS IN n-TYPE Ge.

被引:0
|
作者
Baranskii, P.I.
Buda, I.S.
Kolomoets, V.V.
Samoilovich, A.G.
Sus', V.A.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
The field and angular dependences of the thermomagnetic analog of the Grabner effect in n-type Ge were investigated at T approximately equals 80 degree K under conditions favoring the electron drag by phonons. An analysis of the experimental results, based on the anisotropic scattering theory, made it possible to determine the anisotropy parameter.
引用
收藏
页码:1402 / 1404
相关论文
共 50 条
  • [21] INVESTIGATION OF ANISOTROPY OF SURFACE CONDUCTANCE IN N-TYPE GERMANIUM
    GORKUN, YI
    LITOVCHE.VG
    LYSENKO, VS
    NOVOMINS.VA
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (01): : 275 - 283
  • [22] Investigation of Mn-implanted n-type Ge
    Liu, LF
    Chen, NF
    Yin, ZG
    Yang, F
    Zhou, JP
    Zhang, FQ
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) : 466 - 470
  • [23] ANISOTROPY OF THE PIEZORESISTANCE OF IRRADIATED N-TYPE GE WITH A LAYER IMPURITY DISTRIBUTION
    FEDOSOV, AV
    BUKALO, VR
    TIMOSHCHUK, VS
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (06): : 710 - 711
  • [24] ANISOTROPY OF HALL COEFFICIENT OF N-TYPE GE IN STRONG ELECTRIC FIELDS
    MOVCHAN, EA
    MISELYUK, EG
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (08): : 1047 - +
  • [25] DETERMINATION OF THE ANISOTROPY PARAMETER OF THE DRAG THERMOELECTRIC-POWER OF N-TYPE SI
    BARANSKII, PI
    SAVYAK, VV
    SHCHERBINA, LA
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 717 - 718
  • [26] Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSn
    Jheng, Li Sian
    Li, Hui
    Chang, Chiao
    Cheng, Hung Hsiang
    Li, Liang Chen
    [J]. AIP ADVANCES, 2017, 7 (09):
  • [27] BOUND PHONONS IN N-TYPE GAP
    GALTIER, P
    MARTINEZ, G
    [J]. PHYSICAL REVIEW B, 1988, 38 (15): : 10542 - 10545
  • [28] ANISOTROPY OF THE HALL EFFECT OF MAGNETORESISTANCE OF UNIAXIALLY DEFORMED p-TYPE Ge.
    Baranskii, P.I.
    Baidakov, V.V.
    Elizarov, A.I.
    [J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12): : 1554 - 1556
  • [29] ANISOTROPY OF TRANSVERSE MAGNETORESISTANCE OF N-TYPE GE IN STRONG PULSED MAGNETIC FIELDS
    BARANSKI.PI
    BABICH, VM
    [J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (02): : 318 - +
  • [30] PHONON DRAG IN N-TYPE INSB
    PURI, SM
    GEBALLE, TH
    [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (6A): : 1767 - &