ANISOTROPY OF THE PIEZORESISTANCE OF IRRADIATED N-TYPE GE WITH A LAYER IMPURITY DISTRIBUTION

被引：0

作者：

FEDOSOV, AV

BUKALO, VR

TIMOSHCHUK, VS

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 06期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：710 / 711

页数：2

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