共 50 条
- [1] ANISOTROPY OF THE PIEZORESISTANCE OF IRRADIATED N-TYPE GE WITH A LAYER IMPURITY DISTRIBUTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (06): : 710 - 711
- [2] PIEZORESISTANCE OF IRRADIATED N-TYPE SI WITH A LAYER IMPURITY DISTRIBUTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 343 - 344
- [3] CHARACTERISTICS OF THE PIEZORESISTANCE OF GAMMA-IRRADIATED N-TYPE GE DURING ILLUMINATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (04): : 475 - 476
- [4] PIEZORESISTANCE OF N-TYPE GE CONTAINING RADIATION DEFECTS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1076 - 1077
- [5] PIEZORESISTANCE OF N-TYPE GE IN THE PRESENCE OF DEEP LEVELS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (05): : 584 - 585
- [8] INFLUENCE OF DEEP ENERGY-LEVELS ON PIEZORESISTANCE OF N-TYPE GE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 848 - +