共 50 条
- [31] Effect of phosphorus doping concentration on n-type Ge layer growth Journal of the Korean Physical Society, 2014, 64 : 715 - 721
- [33] PIEZORESISTANCE OF UNIAXIALLY DEFORMED N-TYPE GALLIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 110 - 112
- [35] EFFECT OF DONOR IMPURITY CONCENTRATION ON PIEZORESISTANCE OF N-TYPE GASB PHYSICA STATUS SOLIDI, 1967, 21 (02): : 665 - &
- [36] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON PHYSICAL REVIEW, 1963, 130 (05): : 1667 - +
- [37] Piezoresistance effect in n-type silicon: from bulk to nanowires Journal of Computational Electronics, 2014, 13 : 515 - 528
- [40] PIEZORESISTANCE OF N-TYPE GE DEFORMED ALONG AN AXIS ORIENTED SYMMETRICALLY RELATIVE TO ALL CONSTANT-ENERGY ELLIPSOIDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (11): : 1296 - 1297