Giant Piezoresistance Measured in n-Type Nanothick Si Layer That Has Interface With SiO2

被引:11
|
作者
Yang, Yongliang [1 ,2 ]
Li, Xinxin [1 ,2 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Sci & Technol Microsyst Lab, Shanghai 200050, Peoples R China
基金
美国国家科学基金会;
关键词
Interface effect; piezoresistance; quantum effect; silicon; SILICON; STRESS; DEGRADATION;
D O I
10.1109/LED.2010.2098388
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A giant piezoresistive coefficient is, for the first time, experimentally measured for n-type nanothick silicon. Compared to n-type bulk silicon, the nanothick silicon resistors exhibit at least one order of magnitude higher piezoresistive coefficient. Based on 2-D quantum confinement effect, our theoretic calculation indicates that the piezoresistive sensitivity will decrease and approach to zero, along with continually thinning the n-type silicon resistor. Thus, quantum effect is not responsible for the giant piezoresistance of the n-type nanothick silicon. By phenomenon analysis and qualitative modeling, we attribute the obtained giant piezoresistance to stress-enhanced Si/SiO2 interfacial electron-trapping effect. Hence, the giant piezoresistance in n-type nanothick silicon is dominantly originated from electron concentration change, instead of equivalent mobility change in conventional piezoresistance of bulk silicon.
引用
收藏
页码:411 / 413
页数:3
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