共 50 条
- [1] DETERMINATION OF THE ANISOTROPY PARAMETER OF THE DRAG THERMOELECTRIC-POWER OF N-TYPE SI DEFORMED ALONG THE [110] DIRECTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (03): : 333 - 334
- [2] CARRIER-DENSITY DEPENDENCES OF THE ANISOTROPY PARAMETER OF THE DRAG THERMOELECTRIC-POWER OF N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (11): : 1279 - 1281
- [3] CARRIER-DENSITY DEPENDENCES OF THE ANISOTROPY PARAMETER OF THE DRAG THERMOELECTRIC-POWER OF N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (06): : 717 - 718
- [4] TEMPERATURE-DEPENDENCE OF THE ANISOTROPY OF THE DRAG THERMOELECTRIC-POWER OF UNIAXIALLY DEFORMED N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (06): : 659 - 661
- [6] TEMPERATURE DEPENDENCE OF THE ANISOTROPY OF THE DRAG THERMOELECTRIC POWER OF UNIAXIALLY DEFORMED n-TYPE Si. Soviet physics. Semiconductors, 1984, 18 (06): : 659 - 661
- [7] DETERMINATION OF THE ANISOTROPY PARAMETER OF THE MOBILITY IN N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (09): : 1076 - 1076
- [8] DIFFUSION THERMOELECTRIC-POWER IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1079 - 1080
- [9] TRANSVERSE DRAG THERMOELECTRIC-POWER OF N-TYPE GE IN QUANTIZING MAGNETIC-FIELDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (09): : 1088 - 1090
- [10] ANISOTROPY OF THERMOELECTRIC-POWER OF UNIAXIALLY DEFORMED N-TYPE GE IN HEAVY DOPING RANGE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 403 - 403