ANISOTROPY OF HALL COEFFICIENT OF N-TYPE GE IN STRONG ELECTRIC FIELDS

被引：0

作者：

MOVCHAN, EA

MISELYUK, EG

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1968年 / 1卷 / 08期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1047 / +

页数：1

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[1] INVESTIGATION OF HALL EFFECT IN N-TYPE GERMANIUM AND ITS ANISOTROPY IN STRONG ELECTRIC FIELDS
MOVCHAN, EA
MISELYUK, EG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (05): : 571 - +
[2] ANISOTROPY OF MICROWAVE FARADAY ROTATION IN N-TYPE GE SUBJECTED TO STRONG ELECTRIC FIELDS
BARANOVS.SN
BEREZIKO.DD
GORLOV, BB
POGORELS.AM
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (03): : 492 - &
[3] TRANSVERSE MAGNETORESISTANCE OF N-TYPE GE IN STRONG ELECTRIC AND MAGNETIC FIELDS
GLUZMAN, NG
LYUBIMOV, VE
TSIDILKO.IM
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1969, 11 (02): : 354 - +
[4] ANISOTROPY OF TRANSVERSE MAGNETORESISTANCE OF N-TYPE GE IN STRONG PULSED MAGNETIC FIELDS
BARANSKI.PI
BABICH, VM
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (02): : 318 - +
[5] ANISOTROPY OF HALL-COEFFICIENT OF N-TYPE SI
BARANSKI.PI
DAKHOVSK.IV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1086 - 1087
[6] LONGITUDINAL AND TRANSVERSE MAGNETORESISTANCE OF N-TYPE GE IN STRONG ELECTRIC-FIELDS
MOVCHAN, EA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (01): : 54 - &
[7] ANISOTROPY OF TRANSVERSE MICROWAVE CONDUCTIVITY OF N-TYPE GE IN A STRONG ELECTRIC-FIELD
BARANOVSKII, SN
PODDYMNIKOV, AN
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 222 - 223
[8] CONCENTRATION DEPENDENCE OF HALL COEFFICIENT ANISOTROPY IN N-TYPE GERMANIUM
BARANSKI.PN
DAKHOVSK.IV
KURILO, PM
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (10): : 2463 - &
[9] INSTABILITY OF INJECTED CARRIERS IN N-TYPE GE SUBJECTED TO STRONG ELECTRIC-FIELDS
ALIEV, KM
ISMAILOV, ZA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (11): : 1495 - 1495
[10] ANISOTROPY OF HALL COEFFICIENT IN N-GE
DAKHOVSK.IV
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (07): : 1603 - &

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